EFFECT OF TEMPERATURE TREATMENT ON THE ENERGY SPECTRUM OF DEFECTS IN SILICON DOPED WITH MOLYBDENUM

  • Sh. Daliev Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan
  • A. Paluanova Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan
Keywords: thermostimulated depolarization spectra, fillers of biological origin, fish bone, fish scales, high pressure polyethylene, TSD current.

Abstract

The paper presents the results of studying the spectra of thermally stimulated depolarization of high-pressure polyethylene modified with fillers of biocomposites with fillers of biological origin - fish bone and fish scales. It was found that the stability and surface density of space charges can be controlled by varying the volumetric content of biological fillers. The optimal values of bio-fillers that contribute to the stability of the surface density of the investigated biocomposites have been determined.

References

Милнс Л. Примеси с глубокими уровнями в полупроводниках. – М., Мир, 1977, 547с.

Рейви К. Дефекты и примеси в полупроводниковом кремнии. Пер. с англ., М., Мир, 1984, 471 с.

Lemke H. Properties of Silicon Crystals Doped with Zirconium or Hafninm. Phys.Stat.solidi (a), v.122, (1990), Pp. 617-630.

Weber E.R. Transition Metals in Silicon. //J. Appl. Phys., 1983, A 30, p. 1-22.

Фистуль В.И., Шмугуров В.А. Межузельные состония примесей переходных металлов в кремнии (обзор). //ФТП, 1989, т.23, в.4, с.677-692.

Shakhrukh Kh. Daliev, Shoira P. Usmanova, Anifa D.Paluanova. Energy Spectrum of Defective Centers in Silicon Doped with Molybdenum// International Journal of Emerging Trends in Engineering Research, 8(9), September 2020, 6222 – 6325.Volume 8. No. 9, September 2020.

Далиев Ш.Х., Рахмонов Ж.С., Утамурадова Ш.Б. Низкотемпературный отжиг уровней циркония в кремнии.- ДАН РУз, 2009, №6, с.45-47.

Далиев X.C., Утамурадова Ш.Б., Далиев Ш.Х. Неравновесные процессы в кремнии и кремниевых многослойных структурах. Ташкент: НУУз, 147 С.

Daliev Sh.Kh. Deep Levels of Zirconium in Silicon and Silicon Structures. World Journal of Engineering Research and Technology (WJERT), 2017, Vol. 3, Issue 6, р. 89 -94.

Lang D.V. Deep level transient spectroscopy A new method to characterize traps in semiconductors. J.Appl. Phys. 1974.Vol.45. №7, p. 3023-3032.

Miller G.L., Lang D.V., Kimerling L.C. Capacitance transient spectroscopy. 3. Ann.Rev.Mater.Sci., 1977, v.7, p.377-448.

Берман Л.С., Лебедев А.А. Емкостная спектроскопия глубоких центров в полупроводниках. Л., (1981), 190 с.

Brotherton S.D., Bradley P., and Gill A., "Electrical observation of the Au-Fe 4. complex in silicon", J. Appl. Phys., 1984, v.55(4), pp.952-956

Published
2021-02-15
How to Cite
Daliev, Sh., and A. Paluanova. 2021. “EFFECT OF TEMPERATURE TREATMENT ON THE ENERGY SPECTRUM OF DEFECTS IN SILICON DOPED WITH MOLYBDENUM”. EurasianUnionScientists 5 (1(82), 50-53. https://doi.org/10.31618/ESU.2413-9335.2021.5.82.1240.